Si7461DP
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
Notes:
Vishay Siliconix
t 1
0.1
0.01
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 - 4
10 - 3
10 - 2
10 - 1
1
10
100
600
Square Wa v e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
Single Pulse
0.02
0.05
10 -4
10 -3
10 -2
10 -1
1
Square Wa v e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72567 .
S13-2282-Rev. H, 04-Nov-13
5
Document Number: 72567
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数
SI7462DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET
SI7462DP-T1-E3 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7462DP-T1-GE3 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463ADP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET
SI7463DP 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK
SI7463DP-T1 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 11A 8PIN PWRPAK SO - Tape and Reel
SI7463DP-T1-E3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463DP-T1-GE3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube